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| HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Mounting torque Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C VDSS ID25 A A RDS(on) 1.20 1.05 IXFT 10 N100 1000 V 10 IXFT12 N100 1000 V 12 trr 250 ns Maximum Ratings 1000 1000 20 30 10N100 12N100 10N100 12N100 10N100 12N100 30 10 12 40 48 10 12 mJ 5 300 -55 ... +150 150 -55 ... +150 300 V/ns W C C C C V V V V A A A A A A TO-268 Case Style G S (TAB) G = Gate, S = Source, TAB = Drain Features International standard package Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier Applications DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays Advantages Surface mountable, high power package Space savings High power density 1.13/10 Nm/lb.in. TO-268 = 6 g Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 2.0 4.5 100 TJ = 25C TJ = 125C 250 1 1.20 1.05 V V nA A mA VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 10N100 12N100 Pulse test, t 300 s, duty cycle d 2 % (c) 2004 IXYS All rights reserved DS98509A(01/04) IXFT 10N100 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 6 10 4000 VGS = 0 V, VDS = 25 V, f = 1 MHz 310 70 21 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 2 (External), 33 62 32 122 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 30 50 50 50 100 50 155 45 80 0.42 S pF pF pF ns ns ns ns nC nC nC K/W IXFT 12N100 TO-268 Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC VDS = 10 V; ID = 0.5 * ID25, pulse test Source-Drain Diode Symbol IS ISM VSD trr QRM IRM IF = IS -di/dt = 100 A/s, VR = 100 V Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 10N100 12N100 10N100 12N100 10 12 40 48 1.5 250 400 1 2 10 15 A A A A V ns ns C C A A IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 IXFT 10N100 Fig. 1. Output Characteristics 20 18 16 14 12 10 8 6 4 2 0 5V TJ = 25C VGS = 10V 7V 6V IXFT 12N100 Fig. 2. Input Admittance 20 18 16 14 12 10 8 6 4 2 0 TJ = 25C ID - Amperes 0 5 10 15 20 ID - Amperes 0 1 2 3 4 5 6 7 8 9 10 VDS - Volts VGS - Volts Fig. 3. RDS(on) vs. Drain Current 1.5 1.4 TJ = 25C 2.50 2.25 Fig. 4. Temperature Dependence of Drain to Source Resistance RDS(on) - Normalized 1.3 1.2 1.1 1.0 0.9 VGS = 10V VGS = 15V RDS(on) - Normalized 2.00 1.75 1.50 1.25 1.00 0.75 ID = 6A 0 5 10 15 20 25 0.50 -50 -25 0 25 50 75 100 125 150 ID - Amperes TJ - Degrees C Fig. 5. Drain vs. Case Temperature 20 18 16 Fig. 6. Temperature Dependence of Breakdown and Threshold Voltage 1.2 1.1 VGS(th) BVDSS BV/VG(th) - Normalized 25 50 75 100 125 150 ID - Amperes 14 12 10 8 6 4 2 0 -50 12N100 1.0 0.9 0.8 0.7 0.6 10N100 -25 0 0.5 -50 -25 0 25 50 75 100 125 150 TC - Degrees C TJ - Degrees C (c) 2004 IXYS All rights reserved IXFT 10N100 IXFT 12N100 Fig. 7. Gate Charge Characteristic Curve 10 9 8 7 VDS = 500V ID = 6A IG = 10mA 10s 10 Limited by RDS(on) 100s 1ms 6 5 4 3 2 1 0 0 25 50 75 100 125 150 ID - Amperes VGS - Volts 1 10ms 100ms 0.1 1 10 100 1000 Gate Charge - nCoulombs VDS - Volts Fig. 8. Capacitance Curves 4500 4000 3500 Ciss 20 18 16 14 12 10 8 6 4 2 0 0.0 Fig. 9. Source Current vs. Source to Drain Voltage Capacitance - pF 2500 2000 1500 1000 500 0 0 5 Coss Crss f = 1MHz VDS = 25V ID - Amperes 3000 TJ = 125C TJ = 25C 10 15 20 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VDS - Volts VSD - Volts Fig.10. 1 Transient Thermal Impedance Thermal Response - K/W D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 |
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